JSTS - Journal of Semiconductor Technology and Science
Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study - ScienceDirect
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017
a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... | Download Scientific Diagram
CoMoW/Al2O3-MgO-Li2O Catalytic formulations for DBT hydrodesulphurization
The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Figure 2 from Photochemistry of the α-Al2O3-PETN Interface | Semantic Scholar
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports
The origin of negative charging in amorphous Al2O3 films: the role of native defects
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017
